The fabrication of a fully ion-implanted vertical p–i–n diode
using high-purity semi-insulating 4H–SiC substrate has been demonstrated for
the first time. The intrinsic region is the wafer itself with a thickness of
350 µm. The anode and cathode are obtained by doping the front and back wafer
surfaces with implanted Al+ and P+ ions, respectively, with concentrations of
about 1020 cm−3. The electrical
activation of the implanted dopants is obtained by microwave heating the
samples up to 2100 °C for 30 s. At ±100 V the on and off state current ratio is
in the order of 104. Forward saturation current is
five orders larger than it would be if controlled by the series resistance of
the thick HPSI 4H–SiC intrinsic region.
Source:IOPscience
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