Highlights
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- We fabricated single-crystalline 4H-SiC cantilevers by electrochemical etching.
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- Very sharp resonance was observed for the fabricated 4H-SiC cantilevers.
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- The maximum quality factor of 4H-SiC cantilevers is 230,000.
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- The quality factor is 10 times higher than that of 3C-SiC cantilevers.
Abstract
Single-crystalline 4H-SiC micro cantilevers were fabricated by doping-type selective electrochemical etching of 4H-SiC. Using this method, n-type 4H-SiC cantilevers were fabricated on a p-type 4H-SiC substrate, and resonance characteristics of the fabricated 4H-SiC cantilevers were investigated under a vacuum condition. The resonant frequencies agreed very well with the results of numerical simulations. The maximum quality factor in first-mode resonance of the 4H-SiC cantilevers was 230,000. This is 10 times higher than the quality factor of conventional 3C-SiC cantilevers fabricated on an Si substrate.
Keywords
- MEMS;
- Single-crystalline 4H-SiC;
- Cantilever;
- Quality factor;
- Resonator
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