A novel 4H–SiC MESFET with clival gate

Highlights

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A novel 4H–SiC MESFET structure with clival gate (CG-MESFET) is proposed.

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We compared the DC performances of the CG-MESFET and the DR-MESFET.

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The drain current of the CG-MESFET transforms with the change of EP_CG.

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The drain current reaches to a maximum value when EP_CG is at 1/2 of whole gate.

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Compared with the DR-MESFET, the CG-MESFET has a high breakdown voltage.

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Abstract

In this paper, a novel 4H–SiC metal semiconductor field effect transistor (MESFET) with a clival gate structure (CG-MESFET) is proposed. The drain current (I_D) and the breakdown voltage (V_B) are simulated and compared to the traditional double-recessed gate 4H–SiC MESFET (DR-MESFET). The results indicate that the drain current (I_D) of the CG-MESFET transforms with the change of end point of clival gate (EP_CG), and it reaches to a maximum value about 545 mA when EP_CG is at 1/2 of whole gate, thus, the drain current (I_D) has a much greater increase than that of the DR-MESFET. The CG-MESFET has the advantages of high breakdown voltage (V_B) that is increased by 15% and superior DC performances over the DR-MESFET.

Keywords

• 4H–SiC MESFET; 
• Clival gate structure; 
• Current characteristics; 
• Breakdown characteristics
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    • Source:Sciencedirect
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