Apr 18, 2019

Defects in low-energy electron-irradiated n-type 4H-SiC

The bistable M-center, previously observed in high-energy proton-implanted 4H-SiC, was detected in low-energy electron-irradiated 4H-SiC using deep-level transient spectroscopy (DLTS). Irradiation increased the DLTS signals of the intrinsic defects Z1/2 and EH6/7 and introduced the frequently observed defects EH1 and EH3. After the M-center is annealed out at about 650 K without bias and at about 575 K with bias applied to the sample during the annealing process, a new bistable defect in the low temperature range of the DLTS spectrum, the EB-center, evolves. Since low-energy irradiation affects mainly the carbon atoms in SiC, the M-center and the newly discovered EB-center are most probably carbon-related intrinsic defects.

For more information, please visit our website: www.semiconductorwafers.net,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

No comments:

Post a Comment