Angle-resolved photoelectron spectroscopy study of initial stage of thermal oxidation on 4H-SiC(0001)

A key to improving the performance of SiC MOSFETs is to clarifythe SiO2/SiC interface structure formed by thermaloxidation. We have investigated the initial stage of thermal oxidation on 4H-SiC(0001) by angle-resolved photoelectron spectroscopy. From the changes inthe Si 2p3/2 and C 1s photoelectron spectra, the changes in the chemical bonding state of the SiO2/SiC structure with the progress of thermal oxidation were observed. We also found that the intensity of C–O bonds in the case of 4H-SiC(0001) was smaller thanthat in the case of 4H-SiC withthe same oxide thickness and that the oxidation rate of 4H-SiC(0001) is already slower than that of 4H-SiC in the early stage of oxidation.


Source:IOPscience
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