A study of 4H-SiC diode avalanche shaper

The results of the simulation of an ultrashort pulse generator with a 4H-SiC diode avalanche shaper implemented as a superfast closing switch are presented. The possibility of shaping a voltage pulse with an amplitude of 3300 V and 19 picosecond rise time is demonstrated.

Source:IOPscience

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Local Oxidation of 6H-SiC

SiC is a promising material for high-temperature and the high-power devices. We propose local oxidation for the isolation of the p-n junction. The oxidation rate of silicon nitride is found to be low enough compared to the C face of 6H-SiC, even at 1200° C. The comparison between the process simulation and the experiment is made, with the results showing that the bird's beak of 6H-SiC is longer than that of silicon due to the smaller oxidation rate of 6H-SiC.

Source:IOPscience

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Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes*

Inductively coupled plasma (ICP) etching of 4H-SiC using SF6/O2 gas mixture was studied systematically and the effect of etching was examined by metal field plate SiC Schottky diodes (SBDs). It was found that the etch rate as well as SiC surface morphology were related with ICP power, RF power, pressure, the flow of SF6 and O2. Etching damages (the cone-in-pits and pits) generated at high chuck self-bias were observed, and they were thought to be caused by SiC defects. The degradation of both the reverse and forward I–V performances of SiC SBDs was ascribed to the cone-in-pits and pits. Moreover, the absolute value of forward current is even less than the reverse counterpart in the absolute value voltage range of 0–50 V for SiC SBDs with etching damages.

Source:IOPscience

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