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SiC(silicon carbide) 4H
Thermal diffusivity and specific heat of 4H-SiC crystals as a function of temperature are measured, respectively, from room temperature to 600 °C. The thermal conductivity normal to c-axis was calculated from the measured data for both N-type and V-doped semi-insulating (SI) 4H-SiC single crystals. The thermal conductivity of N-type sample normal to c axis is proportional to T−1.26 . It is approximately 280 W/mK at the room temperature. For V-doped SI sample, the thermal conductivity is proportional to T−1.256 and it is about 347 W/mK at room temperature, bigger than that of N-type sample. For semiconductor materials, total thermal conductivity is the sum of the contributions of lattice and carrier thermal conductivities. Temperature dependent Raman spectrum showed that the life time of phonons for N-type sample is shorter than that for SI sample. Accordingly thermal conductivity contributions from both lattice and carrier components are relatively small for N-type sample.
Xiamen Powerway Advanced Material Co.,Ltd offers SiC 4H as follows:
1)2”, 3",4"SiC 4H  
2" dia 4H-N
Type/ Dopant : N / Nitrogen
Orientation : : <0001>±0.5°;4 +/-0.5°                                                           
Thickness : 350 ± 25 um
MPD10cm-2MPD30 cm-2MPD100 cm-2                       
RT:0.01-0.1 Ω·cm                          
Bow/Warp/TTV<45um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
2)2”, 3",4"SiC 4H  
2" dia 4H-SI
Type/ Dopant : SI / V
Orientation : : <0001>±0.5°;4 +/-0.5°  
Thickness : 350 ± 25 um
MPD10cm-2MPD30 cm-2MPD100 cm-2                       
RT:1E5Ω·cm                         
Bow/Warp/TTV<45um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
3)5*5mm,10*10mm,15*15mm,2” SiC 6H
3" dia 6H-N
Type/ Dopant :  N / Nitrogen
Orientation : <0001>±0.5°;3.5°towards toward < 112(bar)0 > + 0.5°
Thickness : 330 ± 25 um;440+/-25um
MPD10cm-2MPD30 cm-2MPD100 cm-2                   
RT:0.02-0.2Ω·cm                         
Bow/Warp/TTV<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4)10mm*10mm,2",3” SiC 6H
3" dia 6H-SI
Type/ Dopant : SI / V
Orientation : <0001>±0.5°           
Thickness : 330 ± 25 um;430±25um
MPD10cm-2MPD30 cm-2MPD100 cm-2                   
RT:1E5Ω·cm                         
Bow/Warp/TTV:<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
5)Specification for Epitaxial Products on  SiC substrate
Parameter
Nominal value
On-wafer variation
Thickness of GaN buffer(um)
1.8 um
+/- 0.25 um
AlGaN compostion(%Al)
30%
+/-1.25 %
AlGaN thickness (nm)
7 nm
+/-1 nm
AlN thickness
1 nm
+/-0.5 nm
Sheet resistivity (ohms/sq)
<360 for SiC substrate (for 30% AlGaN) 
Std. Dev. < 7.5%
Mobility (cm2/V-sec)
>1700 for SiC substrate
 
Sheet concentration (/cm³)
>1e13
 
XRD(102)rocking curve FWHM (")
<300 for SiC substrate 
Typically 220 
XRD(002)rocking curve FWHM (")
<260 for SiC substrate 
Typically 180 
Bow
<30um
 
Buffer layer resistivity (ohms/sq)
>1e5
 
Substrate resistivity (ohms/sq)
>10000
 
Particulates or other defects(/cm²)
2
 
GaN Cap Layer
2nm
 


The quality of substrate material is a crucial point for semiconductor technology in general and in particular for SiC devices. Using wafers with inhomogeneous surfaces containing mechanically disturbed  and oxidized  regions  can result  in  a  perturbed  device performance (e.g. increase of recombination) or unpredictable degradation effects during operation. Commercial, mechanically polished SiC wafers are known to be damaged and show a high density of scratches in atomic force microscopy (AFM). Hydrogen etching is known to improve this situation by removing several hundred nanometers of bulk material. If you need the details of the surface morphology and structure of 4H-SiC(0001) on-axis after H -etching and annealing in ultra-high vacuum (UHV), please contact us.

 
 
Crystal structure
4H-SiC
 
Remarks
Wurtzite ( Hexagonal)
 
 
C46v-P63mc
 
 
Crystal structure
4H-SiC
Wurtzite ( Hexagonal)
 
Group of symmetry
4H-SiC
C46v-P63mc
 
Bulk modulus
4H-SiC
2.2 x 1012 dyn cm-2
 
Debye temperature
4H-SiC
1300 K
 
Melting point
4H-SiC
3103 ± 40 K
at 35 atm
Density
4H-SiC
3.211 g cm-3
300 K
Hardness
4H-SiC
9.2-9.3
on the Mohs scale
Surface microhardness
4H-SiC
2900-3100 kg mm-2
using Knoop's pyramid test
Dielectric constant (static)
4H-SiC
The value of 6H-SiC dielectric
300 K
Dielectric constant (high frequency)
4H-SiC
constant is usually used
300 K
The value of 6H-SiC dielectric
 
constant is usually used
 

Related Products
sic 4h polytype
sic 4h unit cell
sic 4h wafer
4h sic lattice constant
4h-sic mobility
4h sic electron affinity

If you need more information about SiC 4H, please visit our website: www.qualitymaterial.net, and send us email at powerwaymaterial@gmail.com.



2 comments:

  1. I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC?

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    Replies
    1. For our semi-insulating SiC substrate, it is V doped, we can not offer High Purity semi-insulating SiC, however we can offer undoped SiC if your quantity is good.

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