SiC 4H: July 2018

Jul 18, 2018

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors*

In this paper, the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich- (nitridation–oxidation–nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H–SiC/SiO2 were examined by the measurement of HF I–V, G–V, and C–V over a range of frequencies. The ideal C–V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H–SiC was reduced to 2 × 1011 eV−1 centerdot

cm−2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2 centerdot

V−1

s−1, and the maximum peak field-effect mobility of 38 cm2 centerdot

V−1

s−1 was achieved in fabricated lateral 4H–SiC MOSFFETs.

Source:IOPscience

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Jul 1, 2018

High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor

Optical triggering of a high-voltage (12 kV class) 4H-SiC thyristor to a current Imax = 1300 A is demonstrated. An amplification step (pilot thyristor) and a mixed resistive-inductive load are used to reduce the current ramp dI/dt. The results obtained show that a decrease in the current density at the end of the first, fastest phase of the switch-on process can be achieved either by improving the homogeneity of the initially turned-on region or by introducing additional amplification steps.