Aug 24, 2015

Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers


DLTS technique was used to study deep electron traps in 4H-SiC JBS rectifiers.
Five single-peak and one dominant double-peak deep electron traps were revealed.
The traps were attributed to impurity-related or intrinsic defects in n-type 4H-SiC epilayers.
The dominant deep electron trap at EC – 0.68 eV was attributed to Z1/Z2 defect.

Conventional deep level transient spectroscopy (DLTS) technique was used to study deep electron traps in 4H-SiC Junction Barrier Schottky (JBS) rectifiers. 4H-SiC epitaxial layers, doped with nitrogen and grown on standard n+−4H-SiC substrates were exposed to low-dose aluminum ion implantation process under the Schottky contact in order to form both JBS grid and junction termination extension (JTE), and assure good rectifying properties of the diodes. Several deep electron traps were revealed and attributed to impurities or intrinsic defects in 4H-SiC epitaxial layers, on the basis of comparison of their electrical parameters (i.e. activation energies, apparent capture cross sections and concentrations) with previously published results.


Aug 12, 2015

Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density

Nickel Schottky diodes were fabricated on 4H-SiC. The diodes had excellent current rectification with about ten orders of magnitude between −50 V and +2 V. The ideality factor was obtained as 1.05 which signifies the dominance of the thermionic emission process in charge transport across the barrier. Deep level transient spectroscopy revealed the presence of four deep level defects in the 30–350 K temperature range. The diodes were then irradiated with 5.4 MeV alpha particles up to fluence of 2.6 × 1010 cm−2. Current–voltage and capacitance–voltage measurements revealed degraded diode characteristics after irradiation. DLTS revealed the presence of three more energy levels with activation enthalpies of 0.42 eV, 0.62 eV and 0.76 eV below the conduction band. These levels were however only realized after annealing the irradiated sample at 200 °C and they annealed out at 400 °C. The defect depth concentration was determined for some of the observed defects.