Silicon-carbide-based devices frequently
require a Schottky gate to be deposited on a plasma-etched surface. This paper
considers the effectiveness of nine different pre-metallization surface
preparation procedures in removing the etch damage. The surfaces were assessed
by x-ray photoelectron spectroscopy and by current-voltage measurement of
nickel Schottky diodes formed on both reactive-ion-etched and
non-reactive-ion-etched silicon face 4H-SiC. The treatments included simple
UV-ozone and solvent cleans, oxygen plasma, deposited oxide and thermal
oxidation. It was confirmed that the only process which removed all traces of
surface contamination and etch damage, producing ideal Schottky diodes, was
sacrificial oxidation.
Source:IOPscience
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