Silicon carbide is a semiconductor of choice
for the fabrication of high-power, high-temperature and high-frequency
electronic devices.
Nevertheless, such a material still presents
many problems as regards the crystallographic quality and the presence of
defects, which influence the device performance.
We have investigated 4H-SiC wafers and 4H-SiC
epitaxial layers by microscopy and structural techniques in order to obtain
information about the defect morphology. The goal of this analysis will be to
correlate them with the electrical properties of SiC for power electronic
device applications.
Source:IOPscience
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