In this paper, with the purpose of improvement of power devices properties, the floating-junction technology was used in the 4H-SiC Schottky barrier diodes (SBD) and some parameters were optimized by software simulation. And compared with the conventional power SBDs, the electrical properties of floating-junction Schottky barrier diodes, especially the reverse blocking properties were enhanced. The breakdown voltage and specific on-resistance could reach 4.5KV and 6.15 mΩ.cm2 respectively, while in company with the increasing of Baliga figure of material (BFOM). Then we also investigated the devices switching process and temperature characteristics under definite conditions.
Source:IOPscience
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