A new type of 150 mm vertical 4H-SiC
epitaxial reactor with high-speed wafer rotation has been developed. Multiple
resistance heaters ensure uniform radial temperature distribution throughout a
150-mm-diameter wafer. Enhancement of the growth rates is realized by
high-speed wafer rotation under a relatively high system pressure, and growth
rates of 40–50 µm/h are achieved on 4° off 4H-SiC substrates, maintaining a low
defect density and a smooth surface without macrostep bunching. Excellent
thickness and doping uniformities are simultaneously obtained for a
150-mm-diameter wafer at a high growth rate of 50 µm/h.
Source:IOPscience
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