We have found that aluminum doping into
4H-SiC is performed by irradiating excimer laser light to 4H-SiC immersed in
aluminum chloride solution. Aluminum is introduced in SiC at the concentration
of over 1 × 1020 cm−3 near the surface while, chlorine hardly diffuses into
4H-SiC. After the laser irradiation in aluminum chloride solution, the
resistance of the laser-irradiated region decreases with increasing laser
fluence. Hall effect measurement shows that the laser irradiation produces a
p-type layer and that its sheet carrier concentration is 2.14 × 1011 cm−2. In
addition, we produce a pn junction by doping the surface of n-type 4H-SiC and
by aluminum doping. The pn junction shows rectifying characteristics whose
on/off ratio is about 7 decades and ideality factor is 1.15. This technique is
one of the strong candidate local doping techniques for SiC.
Source:IOPscience
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