We have studied the properties of a
commercially available 4H-SiC epitaxial layer and evaluated its potential
application as an efficient positron remoderator. A remoderation efficiency of
more than 65% has been measured for incident positrons with 1 keV energy. We
have determined the work function and the energy distribution of the emitted
slow positrons, a property which is essential for practical applications.
Comparison of the positron moderation properties of the epitaxial layer with
results from a n-type 4H-SiC single crystal, indicate that the epitaxially
grown layer is a superior secondary moderator than its substrate counterpart.
Source:IOPscience
For more information, please visit our website:
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
No comments:
Post a Comment