We propose a method to evaluate the carrier
transport properties in the inversion layer of 4H–SiC metal-oxide-semiconductor
field-effect transistors (MOSFETs) experimentally. Our approach differs from
conventional methods, which have adjusted the parameters in conventional
mobility models. Intrinsic phonon-limited mobility (μ phonon) in the SiC MOSFET
was observed by suppressing the severe impact of Coulomb scattering on the SiC
MOS inversion layer by lowering the acceptor concentration (N A) of the p-type
well region to the order of 1014 cm−3. In this study, we investigated the
carrier transport properties in the inversion layer of Si-face 4H–SiC MOSFETs
with nitrided oxide. It is revealed that the μ phonon of the SiC MOSFET is a
quarter or less than the conventionally presumed values. Additionally, surface
roughness scattering is found not to be the most dominant mobility-limiting
factor even at high effective normal field (E eff) for the SiC MOSFET. These
results demonstrate that conventional understanding of carrier scattering in
the SiC MOS inversion layer should be modified, especially in the high E eff
region.
Source:IOPscience
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