The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

Heavily Al-doped 4H–SiC thick epilayers (∼90 μm) were grown on 3-in n⁺ 4H–SiC wafers by using the hot-wall CVD method. On the purpose of enhancing incorporated Al-dopant concentration, the growth condition dependence of the Al incorporation behavior in the heavy doping range near Al solubility limit in 4H–SiC was investigated by varying the growth parameters, i.e., growth rate, pressure, temperature and Al-dopant source flow rate. A series of thick epilayers possessing Al-dopant concentration from 9.6×10¹⁹ to 4.7×10²⁰ cm⁻³ were obtained. Among them, the epilayer with Al-dopant concentration of 3.5×10²⁰ cm⁻³ demonstrates a comparably low resistivity of 16.5 mΩ cm as that of commercial n⁺ 4H–SiC wafer. The incorporated Al-dopant concentration dependences on surface morphology, crystalline quality and crystal structures of the heavily Al-doped thick epilayers on n⁺ 4H–SiC substrates were characterized and discussed.

Highlights

• We report the growth of 90 μm thick, heavily Al-doped 4H–SiC epilayers by HW-CVD.

• A relatively high growth rate of about 22 μm/h is verified.

• The resistivity of 16.5 mΩ cm and Al concentration of 3.5×10²⁰ cm⁻³ are achieved.

• The morphology, resistivity, quality and lattice constant change are reported.

Source: Journal of Crystal Growth

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