Anomalous
charge-pumping characteristics of 4H-silicon carbide (SiC) MOSFETs were
analyzed. Charge-pumping measurements of n- and p-channel 4H-SiC MOSFETs
with and without NO annealing were performed. Measurements using various pulse
fall times revealed that the geometric component exists in the n-channel 4H-SiC MOSFETs
and is particularly large in the unannealed n-channel 4H-SiC MOSFETs with
low channel mobility. In addition, influence of interface states on the
charge-pumping curves is significant in the unannealed 4H-SiC MOSFETs.
The charge-pumping curves are distorted by these two nonideal effects, making
the analysis of the charge-pumping curves difficult. A sufficiently long pulse
fall time, which is on the order of 1-10 mus for the n-channel 4H-SiC MOSFETs
with a 10-mum gate length, is required to minimize the effect of the geometric
component.
Source:IEEE
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