Nuclear radiation detectors in the energy range of soft
x-rays have been fabricated using bulk semi-insulating (SI) 4H-SiC crystals
and SI and n-type 4H-SiC epitaxial layers grown by chemical vapor
deposition (CVD) on highly doped (0001) 4H-SiC substrates. The
devices have been characterized by optical microscopy, current-voltage (I-V)
measurements, thermally stimulated current (TSC) spectroscopy (94K - 650 K),
Hall effect, van der Pauw measurements, and electron beam induced current
(EBIC) technique. Both epitaxial layers exhibited relatively shallow levels
related to Al, B, L- and D- centers. Deep level centers in the n-type epitaxial
layer peaked at ~ 400 K (Ea ~ 1.1 eV) and ~ 470 K were
correlated with IL2 defect and 1.1 eV center in high purity bulk SI 4H-SiC.
The SI epitaxial layer exhibited peak at ~ 290 K (Ea = 0.82 -
0.87 eV) that was attributed to IL1 and HK2 centers, and at ~ 525 K that
was related to intrinsic defects and their complexes with energy levels close
to the middle of the band gap. Results of EBIC and optical microscopy
characterization showed segregation of threading dislocations around comet tail
defects in the n-type epitaxial layers. The I-V characteristics of the devices
on SI epitaxial layers obtained in wide temperature range (94K - 650 K)
exhibited steps at ~ 1 V and ~ 70 V corresponding to the ultimate trap filling
of deep centers peaked at >; 500 K and at ~ 250 K (Ea ~ 0.57
eV), & ~ 300 K (Ea ~ 0.85 eV) respectively. The high
temperature resistivity measurements of bulk SI 4H-SiC sample
revealed resistivity hysteresis that was attributed to the filling of the deep
level electron trap centers. The responsivity of the n-type epitaxial SiC sensors
to low energy x-rays is reported for the first time.
If you need more information about Defect correlation studies on 4H-SiC crystals and epitaxial layers for radiation detector applications, please visit our website:http://www.qualitymaterial.net, send us email at powerwaymaterial@gmail.com.
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