The electronic and chemical properties of the interface
region in the structures obtained by the passivation of epitaxial n-type 4H-SiC
layers with bilayers consisting of a 5 nm-thick SiO2 or Al2O3 buffer film and high-κHfO2 layer
were investigated. The main aim was to estimate the influence of the
passivation approach on the interface effective charge density (Qeff)
from the surface photovoltage (SPV) method and, in addition to determine the
in-depth element distribution in the interface region from the Auger electron
spectroscopy (AES) combined with Ar+ ion
profiling. The structure HfO2/SiO2/4H-SiC
exhibited slightly superior electronic properties in terms of Qeff (in
the range of −1011 q cm−2).
Highlights
► We applied contactless
surface photovoltage to assess oxide/SiC interface quality.
► 5 nm-thick SiO2film seems to be better interlayer between SiC and
HfO2 than
Al2O3.
► Element distribution in
the oxide/SiC interface was obtained from AES profiling.
► SiO2 buffer
and transition silicate nanofilms were found from AES spectra analysis.
Source:
Journal of Crystal Growth
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If you need more information about Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures, please visit our website:http://www.qualitymaterial.net, send us email at powerwaymaterial@gmail.com.
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