Whole
4H–SiC 3 and 4 inches wafers optical characterization is a rapid system for
assessing the quality of substrates and epitaxial layers. Spatially resolved
micro-photoluminescence (μPL) and micro-Raman (μR) spectroscopy are performed
on large areas allowing obtaining several structural properties as extended
defect surface density, doping concentration uniformity, stress field of
wafers. With our modified apparatus it is possible to perform μPL and μR fast
characterization with the same resolution on the same area. Moreover it is easy
to perform high resolution μPL and μR analyses on critical areas, i.e. high
defective areas, for device manufacturing.
Source:
Journal of Crystal Growth
If
you need more information about Large area optical characterization of 3 and 4
inches 4H–SiC wafers, please visit our website:http://www.qualitymaterial.net,
send us email at powerwaymaterial@gmail.com.
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