Feb 11, 2020

Evaluation of Model for Determining Nitrogen Doping Concentration from Resultant Strain in Heavily Doped 4H-SiC Crystals

Significant strain in 4H-SiC substrates can be introduced by impurity incorporation in heavily doped 4H-SiC crystals. The non-destructive X-ray double-crystal contour mapping method we reported recently is a powerful tool to estimate the lattice strain levels in 4H-SiC substrates with different doping concentrations. The lattice strain maps were derived from 11-20, 1-100 and 0008 reflections. Result shows that lattice strains within the basal plane and along the [0001] direction are in the order of 10-3 and 10-4 respectively. Hall effect measurements performed to determine the doping concentration of 4H-SiC substrates show an increase in doping concentration with the decrease of contact resistivity. X-ray rocking curve measurements were employed to confirm the existence of significant lattice distortion in heavily doped 4H-SiC substrates, which is in good agreement with the lattice strain analysis based on X-ray contour mapping method.


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