A key to improving the performance of SiC MOSFETs is to clarify the SiO2/SiC interface structure formed by thermal oxidation. We have investigated the initial stage of thermal oxidation on 4H-SiC(0001) by angle-resolved photoelectron spectroscopy. From the changes in the Si 2p3/2 and C 1s photoelectron spectra, the changes in the chemical bonding state of the SiO2/SiC structure with the progress of thermal oxidation were observed. We also found that the intensity of C–O bonds in the case of 4H-SiC(0001) was smaller than that in the case of 4H-SiC($000\bar{1}$) with the same oxide thickness and that the oxidation rate of 4H-SiC(0001) is already slower than that of 4H-SiC($000\bar{1}$) in the early stage of oxidation.
If you need more information about SiC 4H,please visit our website:www.qualitymaterial.net,and send us email at angle.ye@powerwaywafer.com or powerwaymaterial@gmail.com.