Conclusion and Future look about sic4h

1.Good C‐V characteristics characteristics in SiC MOS capacitors capacitors have been demonstrated demonstratedsimply by oxidation in dryO2 at 800oC, on the basis of hermodynamic and kinetic consideration.

2.High‐k dielectric films will be applicable for SiC gate stacks by using stable
interfacial SiO2 layer.

3.SiC interface research is old but will bea hot topic.

4.Si-face is much better than C-face due to a considerably lower oxidationrate in the present method.

5.MOSFET fabrication and characterization will be the next challenge.