p+–π–n−–n+ ultraviolet
photodetectors based on 4H–SiC homoepilayers have been presented. The growth of
the 4H–SiC homoepilayers was carried out in a LPCVD system. The size of the
active area of the photodetectors was 300×300 μm2. The dark and illuminated I–V characteristics
had been measured at reverse biases form 0 to 20 V at room temperature,
and the illuminated current was at least two orders of magnitude than that of
dark current below 13 V bias. The peak value zones of the photoresponse
were located at 280–310 nm at different reverse biases, and the peak value
located at 300 nm was 100 times greater than the cut-off response value in
380 nm at a bias of 10 V, which showed the device had good visible
blind performance. A small red-shift about 5 nm on the peak responsivity
occurred when reverse bias increased from 5 to 15 V.
Source:Microelectronics
Journal
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