Single-crystalline 4H-SiC micro cantilevers were fabricated
by doping-type selective electrochemical etching of 4H-SiC. Using this method,
n-type 4H-SiC cantilevers were fabricated on a p-type 4H-SiC substrate, and
resonance characteristics of the fabricated 4H-SiC cantilevers were
investigated under a vacuum condition. The resonant frequencies agreed very
well with the results of numerical simulations. The maximum quality factor in
first-mode resonance of the 4H-SiC cantilevers was 230,000. This is 10 times
higher than the quality factor of conventional 3C-SiC cantilevers fabricated on
an Si substrate.
Highlights
•
We fabricated single-crystalline 4H-SiC cantilevers by electrochemical etching.
•
Very sharp resonance was observed for the fabricated 4H-SiC cantilevers.
•
The maximum quality factor of 4H-SiC cantilevers is 230,000.
•
The quality factor is 10 times higher than that of 3C-SiC cantilevers.
Source:Applied
Surface Science
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