A new non destructive method has been applied for revealing
micropipes in SiC wafers. Two 4H-polytype commercial wafers have been studied.
The comparison made with the commonly used KOH etching shows some discrepancy
in the absolute values, which can be attributed to the specificity of the two
techniques. However the distribution course is identical. More micropipes are
found close to the periphery of the wafers. In addition, the dislocation
density and their distribution over the wafers are obtained and they are
analysed in conjunction with microhardness measurements. It appears that these
dislocations cannot be directly related to the micropipes.
Source:Materials
Science and Engineering: B
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