SiC 4H: Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities

Jan 7, 2020

Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities

The impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities were examined by a method that utilizes Hall effect measurements and split capacitance–voltage measurements to clarify the mechanism of high field-effect mobilities in SiO2/4H-SiC $(0\bar{3}3\bar{8})$ and $(11\bar{2}0)$ . The characterization results show that high field-effect mobilities in nitrided SiO2/4H-SiC $(0\bar{3}3\bar{8})$ and $(11\bar{2}0)$ are caused by both lower interface trap densities near the conduction band edge and higher Hall mobilities compared to those in nitrided SiO2/4H-SiC (0001) and $(000\bar{1})$ .

Source:IOPscience

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SiC 4H

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Jan 7, 2020

Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities

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