Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors*

In this paper, the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich- (nitridation–oxidation–nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H–SiC/SiO2 were examined by the measurement of HF I–V, G–V, and C–V over a range of frequencies. The ideal C–V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H–SiC was reduced to 2 × 1011 eV−1cm−2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2V−1s−1, and the maximum peak field-effect mobility of 38 cm2V−1s−1 was achieved in fabricated lateral 4H–SiC MOSFFETs.

Source:IOPscience

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