Oct 29, 2017

Preparation of SiC/Ge/graphene heterostructure on 4H-SiC(0001)


SiC/Ge/graphene heterostructure on 4H-SiC was employed to realize VIS-NIR light operation of SiC devices.
Self-assembled submicron Ge islands have been prepared on 4H-SiC(0001) successfully.
Graphene on Cu foil was grown and wet transferred on Ge islands to form SiC/Ge/graphene heterostructure.
The structure of the SiC/Ge/graphene heterojunction is defined by XRD, TEM and Raman spectra characterizations.


Due to the wide bandgap of SiC, SiC-based optoelectronic devices can not be operated by visible (VIS) and near-infrared (NIR) light sources. A promising way to solve this problem is to adopt a SiC/Ge/Graphene heterostructure. The Ge film can be used as VIS-NIR-absorbing layer. As a electrode, graphene also forms a Schottky junction with Ge on 4H-SiC. To form the SiC/Ge/graphene heterostructures, Ge film was prepared on 4H-SiC(0001) by chemical vapor deposition, and then graphene on Cu foil was wet transferred on Ge films. The Ge film on 4H-SiC(0001) has polycrystalline structure and consists of self-assembled submicron Ge islands. The monolayer graphene with a few cracks and wrinkles was transferred on the Ge rough surface. The SiC/Ge/graphene heterostructure with high light absorption in the 500–1200 nm range was prepared on 4H-SiC successfully.

Graphical abstract

Unlabelled figure


Ge/graphene; heterostructure 
Chemical vapour deposition;

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