The effectiveness of n-type nitrogen doping of bulk 4H-SiC grown on seeds of different orientation is studied by optical absorption measurements. The 4H-SiC ingots have been grown by physical vapour transport (PVT), with nitrogen doping from the SiC source. The nitrogen concentration was determined at room temperature from the absorption peak intensity at 464 nm, with account for the degree of donor ionization. It has been shown that 4H-SiC ingots grown on Si (11-22) faces are significantly less doped by nitrogen than the ones grown on C (11-2-2).

Source:  iopscience

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