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SiC(silicon carbide) 4H
Thermal diffusivity and specific heat of 4H-SiC crystals as a function of temperature are measured, respectively, from room temperature to 600 °C. The thermal conductivity normal to c-axis was calculated from the measured data for both N-type and V-doped semi-insulating (SI) 4H-SiC single crystals. The thermal conductivity of N-type sample normal to c axis is proportional to T−1.26 . It is approximately 280 W/mK at the room temperature. For V-doped SI sample, the thermal conductivity is proportional to T−1.256 and it is about 347 W/mK at room temperature, bigger than that of N-type sample. For semiconductor materials, total thermal conductivity is the sum of the contributions of lattice and carrier thermal conductivities. Temperature dependent Raman spectrum showed that the life time of phonons for N-type sample is shorter than that for SI sample. Accordingly thermal conductivity contributions from both lattice and carrier components are relatively small for N-type sample.
Xiamen Powerway Advanced Material Co.,Ltd offers SiC 4H as follows:
1)2”, 3",4"SiC 4H
2" dia 4H-N
Type/ Dopant : N / Nitrogen
Orientation : : <0001>±0.5°;4 +/-0.5°
Thickness : 350 ± 25 um
MPD＜10cm-2；MPD＜30 cm-2；MPD＜100 cm-2
RT:0.01-0.1 Ω·cm
Bow/Warp/TTV<45um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
2)2”, 3",4"SiC 4H
2" dia 4H-SI
Type/ Dopant : SI / V
Orientation : : <0001>±0.5°;4 +/-0.5°
Thickness : 350 ± 25 um
MPD＜10cm-2；MPD＜30 cm-2；MPD＜100 cm-2
RT:≥1E5Ω·cm
Bow/Warp/TTV<45um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
3)5*5mm,10*10mm,15*15mm,2” SiC 6H
3" dia 6H-N
Type/ Dopant :  N / Nitrogen
Orientation : <0001>±0.5°;3.5°towards toward < 112(bar)0 > + 0.5°
Thickness : 330 ± 25 um;440+/-25um
MPD＜10cm-2；MPD＜30 cm-2；MPD＜100 cm-2
RT:0.02-0.2Ω·cm
Bow/Warp/TTV<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4)10mm*10mm,2",3” SiC 6H
3" dia 6H-SI
Type/ Dopant : SI / V
Orientation : <0001>±0.5°
Thickness : 330 ± 25 um;430±25um
MPD＜10cm-2；MPD＜30 cm-2；MPD＜100 cm-2
RT:≥1E5Ω·cm
Bow/Warp/TTV:<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
5)Specification for Epitaxial Products on  SiC substrate Parameter Nominal value On-wafer variation Thickness of GaN buffer(um) 1.8 um +/- 0.25 um AlGaN compostion(%Al) 30% +/-1.25 % AlGaN thickness (nm) 7 nm +/-1 nm AlN thickness 1 nm +/-0.5 nm Sheet resistivity (ohms/sq) <360 for SiC substrate (for 30% AlGaN)  Std. Dev. < 7.5% Mobility (cm2/V-sec) >1700 for SiC substrate 　 Sheet concentration (/cm³) >1e13 　 XRD(102)rocking curve FWHM (") <300 for SiC substrate  Typically 220  XRD(002)rocking curve FWHM (") <260 for SiC substrate  Typically 180  Bow <30um 　 Buffer layer resistivity (ohms/sq) >1e5 　 Substrate resistivity (ohms/sq) >10000 　 Particulates or other defects(/cm²) ＜2 　 GaN Cap Layer 2nm
The quality of substrate material is a crucial point for semiconductor technology in general and in particular for SiC devices. Using wafers with inhomogeneous surfaces containing mechanically disturbed  and oxidized  regions  can result  in  a  perturbed  device performance (e.g. increase of recombination) or unpredictable degradation effects during operation. Commercial, mechanically polished SiC wafers are known to be damaged and show a high density of scratches in atomic force microscopy (AFM). Hydrogen etching is known to improve this situation by removing several hundred nanometers of bulk material. If you need the details of the surface morphology and structure of 4H-SiC(0001) on-axis after H -etching and annealing in ultra-high vacuum (UHV), please contact us.

Basic parameters of 4H SiC
Crystal structure	4H-SiC		Remarks
	Wurtzite ( Hexagonal)
	C46v-P63mc
Crystal structure	4H-SiC	Wurtzite ( Hexagonal)
Group of symmetry	4H-SiC	C46v-P63mc
Bulk modulus	4H-SiC	2.2 x 1012 dyn cm-2
Debye temperature	4H-SiC	1300 K
Melting point	4H-SiC	3103 ± 40 K	at 35 atm
Density	4H-SiC	3.211 g cm-3	300 K
Hardness	4H-SiC	9.2-9.3	on the Mohs scale
Surface microhardness	4H-SiC	2900-3100 kg mm-2	using Knoop's pyramid test
Dielectric constant (static)	4H-SiC	The value of 6H-SiC dielectric	300 K
Dielectric constant (high frequency)	4H-SiC	constant is usually used	300 K
		The value of 6H-SiC dielectric
		constant is usually used

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sic 4h wafer

4h sic lattice constant

4h-sic mobility

4h sic electron affinity

If you need more information about SiC 4H, please visit our website: www.qualitymaterial.net, and send us email at powerwaymaterial@gmail.com.